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Characteristics of the high-power 980-nm laser diodes with decoupled confinement heterostructure
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A. Okubo, Y. Yamada, Y. Oeda, K. Igarashi, T. Fujimoto, Y. Yamada, and K. Muro, "Characteristics of the high-power 980-nm laser diodes with decoupled confinement heterostructure," in Proc. Tech. Dig. Optical Fiber Commun. Conf., San Diego, CA, 1999, paper TuC3.
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3
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0033123904
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High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation
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May/June
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T. Hiramoto, M. Sagawa, T. Kikawa, and S. Tsuji, "High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 817-821, May/June 1999.
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Weakly index guided buried-stripe type 980-nm laser diodes grown by a combination of GS-MBE and MOVPE with an AlGaAs/InGaP/GaAs double etch stop structure
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H. Horie, S. Nagao, K. Shimoyama, and T. Fujimori, "Weakly index guided buried-stripe type 980-nm laser diodes grown by a combination of GS-MBE and MOVPE with an AlGaAs/InGaP/GaAs double etch stop structure," Jpn. J. Appl. Phys., vol. 38, pp. 5888-5897, 1999.
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0346585746
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San Diego, CA, paper PD-39
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M. Usami, N. Edagawa, Y. Matsushima, H. Horie, I. Sakamoto, T. Fujimori, and H. Gotoh, "First undersea-qualified 980-nm pump laser diode module with massive life test," in Proc. Tech. Dig. Optical Fiber Commun. Conf., San Diego, CA, 1999, paper PD-39.
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0033884468
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Highly reliable buried-stripe type 980-nm laser diodes for practical optical communications
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0343591917
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0031259359
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Investigation of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers
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0034488799
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Longitudinal-mode characteristics of weakly index guided buried-stripe type 980-nm laser diodes with and without substrate-mode-induced phenomena
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to be published
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H. Horie, N. Arai, Y. Yamamoto, and S. Nagao, "Longitudinal-mode characteristics of weakly index guided buried-stripe type 980-nm laser diodes with and without substrate-mode-induced phenomena," IEEE J. Quantum Electron., to be published.
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0033874684
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Jan.
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H. Horie, Y. Yamamoto, N. Arai, and H. Ohta, "Thermal rollover characteristics up to 150°C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNα layer," IEEE Photon. Technol. Lett., vol. 12, pp. 13-15, Jan. 2000.
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11
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0033123733
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Reliability improvement of 980-nm laser diodes with a new facet passivation process
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May/June
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H. Horie, H. Ohta, and T. Fujimori, "Reliability improvement of 980-nm laser diodes with a new facet passivation process," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 832-838, May/June 1999.
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