Longitudinal-mode characteristics of weakly index-guided buried-stripe type 980-nm laser diodes with and without substrate-mode-induced phenomena

IEEE Journal of Quantum Electronics

Volumn 36, Issue 12, 2000, Pages 1454-1461

  Horie, Hideyoshi ^a,b   Arai, Nobuhiro ^a,c,d   Yamamoto, Yoshitaka ^a,e   Nagao, Satoru ^a,f,g  

^a MITSUBISHI CHEMICAL CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c KWANSEI GAKUIN UNIVERSITY   (Japan)

^d OSAKA UNIVERSITY   (Japan)

^e OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^f HOKKAIDO UNIVERSITY   (Japan)

^g ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; LASER MODES; OPTICAL RESOLVING POWER; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

INDEX GUIDED BURIED STRIPE LASERS; LONGITUDINAL MODE; MODE HOPPING; SEMICONDUCTOR WAVEGUIDE; SUBSTRATE MODE;

SEMICONDUCTOR LASERS;

EID: 0034488799     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.892566     Document Type: Article

References (26)

1. J. L. Zyskind, C. R. Giles, J. R. Simpson, and D. J. DiGiovanni, "Erbium-doped fiber amplifiers and the next generation of lightwave system," AT&T Tech. J., vol. 71, pp. 53-62, 1992.
2. 3+-doped fiber amplifiers," IEEE Photon. Technol. Lett., vol. 2, pp. 208-210, 1990.
3. 3+ doped fiber amplifier," Electron. Lett., vol. 25, pp. 1563-1564, 1989.
4. A. Moser, A. Oosenbrug, E. E. Latta, Th. Foster, and M. Gasser, "High-power operation of strained InGaAs/AlGaAs single quantum well lasers," Appl. Phys. Lett., vol. 59, pp. 2642-2644, 1991.
5. S. Ishikawa, K. Fukagai, H. Chida, T. Miyazaki, H. Fujii, and K. Endo, "0.98-1.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides," IEEE J. Quantum Electron., vol. 29, pp. 1936-1942, 1993.
6. H. Asonen, A. Ovtchinnikov, G. Zhang, J. Näppi, P. Savolainen, and M. Pessa, "Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers," IEEE J. Quantum Electron., vol. 30, pp. 415-423, 1994.
7. A. Kasukawa, M. Ohkubo, T. Namegaya, T. Ijichi, Y. Ikegami, N. Tsukiji, S. Namiki, and Y. Shirasaki, "980 nm and 1480 nm high power laser modules for Er-doped fiber amplifiers," Optoelectron. Device & Technol., vol. 9, pp. 219-230, 1994.
8. A. Shima, H. Kizuki, A. Takemoto, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, K. Shigihara, A. Adachi, E. Omura, and M. Otsubo, "0.78-and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 102-109, 1995.
9. K. Hiramoto, M. Sagawa, T. Kikawa, and S. Tsuji, "High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation," IEEE J. Select Topics Quantum Electron., vol. 5, pp. 817-821, 1999.
10. B. Pedersen, B. A. Thompson, S. Zemon, W. J. Miniscalco, and T. Wei, "Power requirements for erbium-doped fiber amplifiers pumped in the 800, 980, and 1480nm bands," IEEE Photon. Technol. Lett., vol. 4, pp. 46-49, 1992.
11. M. Fukuda, M. Okayasu, J. Temmyo, and J. Nakano, "Degradation behavior of 0.98 μm strained quantum well InGaAs/AlGaAs lasers under high-power operation," IEEE J. Quantum Electron., vol. 30, pp. 471-476, 1994.
12. E. V. Arjanov, O. V. Danillia, V. P. Koneyaev, A. S. Logginov, V. I. Shveikin, and I. I. Vinogradov, "InGaAs strained-layer single-quantum-well lasers spontaneous emission spectra and their features," Proc. SPIE, vol. 2139, pp. 146-153, 1994.
13. E. V. Arzhanov, A. P. Bogatov, V. P. Konyaev, O. M. Nikitina, and V. I. Shveikin, "Waveguide properties of heterolasers based on In-GaAs/GaAs strained quantum-well structures and characteristics of their gain spectra," Quantum Electron., vol. 24, pp. 581-587, 1994.
14. P.G. Eliseev and A. E. Darkin, "Analysis of the mode internal coupling in InGaAs/GaAs laser diodes," Laser Phys., vol. 4, pp. 485-492, 1994.
15. I. A. Avrutsky, R. Gordon, R. Clayton, and J. M. Xu, "Ivestigation of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers," IEEE J. Quantum Electron., vol. 33, pp. 1801-1809, 1997.
16. D. Bhattacharyya, E. A. Avrutin, A. C. Bryce, J. H. Marsh, D. Bimberg, F. Heinrichsdorff, V. M. Ustinov, S. V. Zaitsev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, A. I. Onischenko, and E. P. O'Reilly, "Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 648-657, 1999.
17. P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patane, A. Polimeni, and M. Henini, "Spectral analysis of InGaAs/GaAs quantum-dot lasers," Appl. Phys. Lett., vol. 75, pp. 2169-2171, 1999.
18. H. Horie, S. Nagao, K. Shimoyama, and T. Fujimori, "Weakly index guided buried-stripe type 980 nm laser diodes grown by a combination of gas source molecular beam epitaxy and metalorganic vapor phase epitaxy with an AlGaAs/InGaP/GaAs double etch stop structure," Jpn. J. Appl. Phys., vol. 38, pp. 5888-5897, 1999.
19. H. Horie, Y. Yamamoto, N. Arai, and H. Ohta, "Thermal rollover characteristics up to 150°C of buried-stripe type 980 nm laser diodes with a current injection window delineated by a SiNx layer," IEEE Photon. Technol. Lett., vol. 12, pp. 13-15, 2000.
20. H. Horie, Y. Yamamoto, N. Arai, and H. Ohta, "Corrections to 'Thermal rollover characteristics up to 150°C of buried-stripe type 980 nm laser diodes with a current injection window delineated by a SiNx layer'," IEEE Photon. Technol. Lett., vol. 12, p. 576, 2000.
21. H. Horie, H. Ohta, and T. Fujimori, "Reliability improvement of 980-nm laser diodes with a new facet passivation process," IEEE J. Select Topics Quantum Electron., vol. 5, pp. 832-838, 1999.
22. F. R. Nash, "Mode guidance parallel to the junction plane of double-heterostructure GaAs lasers," J. Appl. Phys., vol. 44, pp. 4696-4707, 1973.
23. M. Yamada and Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys., vol. 52, pp. 2653-2664, 1981.
24. M. Yamada, "Transverse and longitudinal mode control in semiconductor injection lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 1365-1380, 1983.
25. 1 - xAs injection lasers," J. Appl. Phys., vol. 49, pp. 4644-4648, 1978.
26. M. Ohtsu, Y. Otsuka, and Y. Teramachi, "Precise measurements and computer simulations of mode-hopping phenomena in semiconductor lasers," Appl. Phys. Lett., vol. 46, pp. 108-110, 1985.