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Volumn 38, Issue 10, 1999, Pages 5888-5897

Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AIGaAs/InGaP/GaAs Double Etch Stop Structure

Author keywords

980 nm laser diodes; Buried stripe type; Double etch stop; Semiconductor lasers; Semiconductor waveguides; Wafer uniformity; Weakly index guided design

Indexed keywords

ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS;

EID: 0033340133     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5888     Document Type: Article
Times cited : (12)

References (30)
  • 24
    • 33645043947 scopus 로고
    • Academic Press, San Diego, Chap. 8
    • P. S. Zory, Jr.: Quantum Well Lasers (Academic Press, San Diego, 1993) Chap. 8 p. 384.
    • (1993) Quantum Well Lasers , pp. 384
    • Zory Jr., P.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.