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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 186-191
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Growth of self-assembled AlxGa1-x-yN quantum dots by MOVPE
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Author keywords
A2. Wetting layer; A3. Metalorganic vapor phase epitaxy; A3. Self assembled quantum dots; B1. Alxinyga1 x yn
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Indexed keywords
BAND STRUCTURE;
LATTICE CONSTANTS;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SELF ASSEMBLY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
STRAIN;
THERMODYNAMIC STABILITY;
WETTING;
ALXINYGA1-X-YN;
BAND GAP;
SELF-ASSEMBLED QUANTUM DOTS;
WETTING LAYER;
CRYSTAL GROWTH;
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EID: 9944263980
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.107 Document Type: Conference Paper |
Times cited : (2)
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References (15)
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