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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 543-548

MOVPE growth of AlGaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers

(6) Decobert, J a Lagay, N a Cuisin, C a Dagens, B a Thedrez, B a Laruelle, F a

Author keywords

A1. X ray diffraction; A2. Tensile strain; A3. Metalorganic vapor phase epitaxy; B1. Algainas inp; B3 quantum well lasers

Indexed keywords

COMPOSITION; CURRENT DENSITY; HETEROJUNCTIONS; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRENGTH; X RAY DIFFRACTION ANALYSIS;

ALGAINAS/INP; GAIN PARAMETERS; HIGH-SPEED LASERS; QUANTUM-WELL LASERS; TENSILE STRAIN;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 9944248029 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.032 Document Type: Conference Paper

Times cited : (27)

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