Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 390-394

  Decobert, Jean ^a   Herrati, D ^a   Colson, V ^a   Leclerc, D ^a   Goldstein, L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

A1. Silicon doping; A1. Sulphur doping; A1. Zinc doping; A3. Metalorganic vapor phase epitaxy; B1. Indium phosphide

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SULFUR; ZINC;

SELECTIVE AREA GROWTH (SAG);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291253     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01896-1     Document Type: Conference Paper

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