Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm

IEEE Journal of Quantum Electronics

Volumn 32, Issue 12, 1996, Pages 2148-2155

  Yokouchi, Noriyuki ^a,b,d,e   Yamanaka, Nobumitsu ^b,e   Iwai, Norihiro ^b,e   Nakahira, Yoshinori ^b,c   Kasukawa, Akihiko ^a,b,d,e,f  

^a IEEE

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^d Tokyo Institute of Technology ^*  (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CURRENT DENSITY; LIGHT SOURCES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

BURIED HETEROSTRUCTURE (BH) LASERS; TENSILE STRAINED QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0030393084     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.544762     Document Type: Article

References (27)

1. A. R. Adams. "Band-structure engineering for low-threshold high-efficiency semiconductor lasers." Electron. Lett., vol. 22, pp. 249-250, 1986.
2. E. Yablonovitch and E. O. Kane, "Reduction of the lasing threshold current density by lowering the valence band effective mass," J. Lightwave Technol., vol. LT-4, pp. 504-506, 1986.
3. N. Yamamoto, K. Yokoyama, T. Yamanaka, and M. Yamamoto, "Very low threshold graded-index separate-confinemem-heterostructure strained InGaAsP single-quantum-well lasers." Electron. Lett., vol. 30, pp. 243-244, 1994.
4. E. P. O'Reilly, G. Jones, A. Ghiti, and A. R. Adams, "Improved performance due to suppression of spontaneous emission in tensile-strained semiconductor lasers," Electron. Lett., vol. 27, pp. 1417-1419, 1991.
5. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, and T. van Dongen, "Submilliamp threshold current (0.62 mA at 0 °C) and high output power (220 mW) I.5-μm tensile strained InGaAs single quantum well lasers," Electron. Lett., vol. 28, pp. 829-830, 1992.
6. C. E Zah, R. Bhat, B Pathak, C. Caneau, F. J. Favire, N. C. Andreadakis, O. M. Hwang, M A. Koza, C. Y. Chen, and T. P. Lee, "Low threshold 1.5-μm tensile-strained single quantum well lasers," Electron. Lett., vol. 27, pp. 1414-1416, 1991.
7. T. Yamamoto, H. Nobuhara, K. Tanaka, T Odagawa, M. Sugawara, T. Fujii, and K. Wakao, "Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures," IEEE J. Quantum Electron., vol. 29, pp. 1560-1564, 1994
8. P. J. A. Thijs, T. van Dongen, L. F. Tiemeijer, and J. S. M. Binsma, "High-performance γ = 1.3 μm InGaAsP-InP strained-layer quantum well lasers," J. Lightwave Technol. vol 12, pp. 28-37, 1994.
9. A. Mathur, P. Grodzinski, J. S. Osinski, and P. D. Dapkus, "Low threshold 1.3 μm strained and lattice matched matched quantum well Users," J. Crystal Growth, vol. 124, pp. 730-736, 1992.
10. 1-x-y As/InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Qunatum Electron., vol. 30, pp. 511-523, 1994.
11. J. M. Vandenberg, R. A. Hamm, M. B. Panish, and H. Temkin, "High-resolution x-ray diffraction strudies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy," J. Appl. Phys., vol. 62, pp. 1278-1283, 1987.
12. 1-xP epitaxial layers on (001) GaAs Substrate," J. Appl. Phys., vol. 54, pp 2052-2056, 1983.
13. N. G. Anderson and S. D. Jones, "Optimized tight-binding valence bands and heterojunction offsets in strained III-V semiconductors," J. Appl. Phys., vol. 70, pp. 4342-4356, 1991.
14. J.-Y. Emery, C. Starck, L. Goldstein, A. Pochet, and A. Rocher, "Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm," J. Crystal Growth, vol. 127, pp. 241-245, 1993.
15. M. Rosenzweig, M. Mohrle, H. Duser, and H. Venghaus, "Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement dlasers," IEEE J. Quantum Electron., vol. 274, pp. 1804-1811, 1991.
16. B. I. Miller, U. Koren, M. G. Young, and M. D. Chien, "Strain-compensated starined-layer superlattices for 1.5 μm wavelength lasers," Appl. Phys. Lett., vol. 58, pp. 1952-1954, 1991.
17. T. Namegaya, N. Matsumoto, N. Yamanaka, N. Iwai, H. Nakayama, and A. Kasukawa, "Effect of well number in 1.3-μm GaInAs/InP GRIN-SCH strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 578-584, 1994.
18. G. P. Agrawal and N. K. Dutta, Longwavelength Semiconductor Lasers. New York: Van Nostraind Reinhold, 1986.
19. 1-x As/GaInAsP/InP strained-quantum-well structures," IEEE Photon. Technol. Lett., vol. 5, pp. 142-145, 1993.
20. S. Seki, T. Yamanaka, W. Lui, Y. Yoshikuni, and K. Yokoyama, "Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsp/InP strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 500-510, 1994.
21. P. J. A. Thijis, L. F. Tiemeijer, P I. Kuindersma, J. J. M. Binsma, and T. Van Dongen, "High-performance 1.5 μm wavelength InGaAs-InGaAsp strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, pp. 1426-1439, 1991.
22. K. Kikuchi, "Precise estimation of linewidth reduction in wavelength-detuned DFB semiconductor lasers," Electron. Lett., vol. 24, pp. 80-81, 1988.
23. L. D. Westbrook, N. C. Fletcher, D. M. Cooper, M. Stevenson, and P. C. Spurdens, "Intensity noise in 1.5 μm GaInAs quantum well buried heterostructure lasers," Electron. Lett., vol. 25, pp. 1183-1184, 1989.
24. K. Uomi, H. Nakano, and N. Chinone, "Intrinsic modulcation bandwidth in ultra-high-speed 1.3 and 1.55 μm GaInAsP DFB lasers," Electron. Lett., vol. 25, pp. 1689-1690, 1989.
25. M. C. Tatham, C. P. Seltzer, S. D. Perrin, and D. M. Cooper, "Frequency response and differential gain in strained and unstrained InGaAs/InGaAsP quantum well lasers," Electron. Lett., vol. 27, pp. 1278-1280, 1991.
26. T. Fukushima, R. Nagarajan, M. Ishikawa, and J. E. Bowers, "Highspeed dynamics in InP based multiple quantum well lasers," Jpn. J. Appl. Phys., vol. 32, pp. 70-83, 1993.
27. Bellcore Technical Advisory TA-NWT-000983, Issue 2 (Draft), "Reliability assurance practice for optoelectronics devices in loop applications," Oct. 1993.