Potentialities of GaN-based microcavities in strong coupling regime at room temperature

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 599-606

  Antoine Vincent, N ^a   Natali, F ^b   Byrne, D ^b   Disseix, P ^a   Vasson, A ^a   Leymarie, J ^a   Semond, F ^b   Massies, J ^b  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; EXCITONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTONS; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MICROCAVITIES; PHOTOREFLECTIVITY; RABI SPLITTING; ROOM TEMPERATURE; TRANSITION ENERGY;

GALLIUM NITRIDE;

EID: 9944233981     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.017     Document Type: Article

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