Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects

Materials Letters

Volumn 59, Issue 4, 2005, Pages 510-513

  Zhu, Ming ^a   Liu, Weili ^a   Song, Zhitong ^a   Fu, Ricky K Y ^b   Chu, Paul K ^b   Lin, Chenglu ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

AlN; Electronic materials; Plasma immersion ion implantation; Semiconductors; Silicon on insulator; Wafer bonding

Indexed keywords

ALUMINUM NITRIDE; DEPOSITION; HEATING; HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AIN; ELECTRONIC MATERIALS; PLASMA IMMERSION ION IMPLANTATION; SILICON-ON-INSULATORS; WAFER BONDINGS;

SILICON;

EID: 9944223680     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.10.035     Document Type: Article

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