Modelling the Formation of Nano-Sized SiC on Si

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 591-594

  Safonov, Kirill L ^a   Schmidt, Alexander A ^a   Trushin, Yuri V ^a,b   Kulikov, Dmitri V ^b   Cimalla, Volker ^c   Pezoldt, Jörg ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Cluster Formation; Computer Simulation; Rate Equations; Silicon Carbide; Surface Diffusion

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SILICON; THERMAL EFFECTS;

NANO-CLUSTERS;

SILICON CARBIDE;

EID: 9744272701     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.591     Document Type: Conference Paper

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