Investigation of the nucleation and growth of SiC nanostructures on Si

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 92-96

  Scharmann, F ^a   Maslarski, P ^a   Attenberger, W ^b   Lindner, J K N ^b   Stritzker, B ^b   Stauden, Th ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; FILM GROWTH; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; PRECIPITATION (CHEMICAL); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

POLYNUCLEAR; TWO-DIMENSIONAL NUCLEATION PROCESS;

SEMICONDUCTING FILMS;

EID: 0034497099     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01476-0     Document Type: Article

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