Improvement of rinsing efficiency after sulfuric acid hydrogen peroxide mixture (H2SO4/H2O2) by HF addition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 1989-1992

  Messoussi, Rochdi ^a,b   Verhaverbeke, Steven ^a,c   Yabune, Tatsuhiro ^a   Nose, Masashi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b IBN TOFAIL UNIVERSITY   (Morocco)

^c CFM Technologies   (United States)

Author keywords

Contact angle; F termination; Hydrophobicity; Native oxide thickness; Rinsing efficiency; Roughness; SPFM

Indexed keywords

ADDITION REACTIONS; ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; EPITAXIAL GROWTH; HYDROGEN PEROXIDE; OXIDES; PASSIVATION; SEMICONDUCTING SILICON; SUBSTRATES; SULFURIC ACID; SURFACE ROUGHNESS; SURFACES;

HYDROGEN FLUORIDE; HYDROPHOBICITY; NATIVE OXIDE THICKNESS; RINSING EFFICIENCY; SULFURIC ACID HYDROGEN PEROXIDE HYDROGEN FLUORIDE MIXTURE;

MIXTURES;

EID: 0030123681     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1989     Document Type: Article

References (16)

1. T. Ohmi: IEDM Tech. Dig. (1989) p. 49.
2. J. A. Amick: Solid State Technol. (1976) 47.
3. T. Ohmi, Y. Kasama, K. Sugiyama, Y. Mizuguchi, Y. Yagi, H. Inaba and M. Kawakami: The Ohmi Papers (Canon Communications, Santa Monica, 1990) p. 156.
4. S. Verhaverbeke, M. Meuris, P. W. Mertens, H. F. Shmidt, M. M. Heyns, A. Philipossian, D. Graef and K. Dillenbeck: Proc. 4th Int. Symp. ULSI Science and Technology 1993 (Electrochemical Society, Pennington, 1993) Vol. 93-13, p. 199.
5. W. A. Kern and D. A. Puotinen: RCA Rev. 31 (1970) 187.
6. A. Ohsawa, K. Honda, R. Takizawa, T. Nakanishi, M. Aoki and N. Toyokura: Semiconductor Silicon 1990, eds. H. R. Huff, A. Barraclough and J. Chikawa (Electrochemical Society, Pennington, 1990) p. 601.
7. T. Shimono and M. Tsuji: Ext. Abstr., Electrochemical Society, Washington DC, May 5-10, 1991, Vol. 91-1, p. 278.
8. S. Aoyama, Y. Nakagawa and T. Ohmi: Ext. Abstr. 1992 Int. Conf. Solid State Devices and Materials, Tsukuba 1992 (Buisness Center for Academic Societies, Tokyo, Japan, 1992) p. 126.
9. K. Nakamura, T. Futatsuki, K. Makihara and T. Ohmi: Ext. Abstr. Electrochemical Society, New Orleans, Louisiana, October 10-15, 1993, Vol. 93-2, p. 563.
10. H. Ogawa and T. Hattori: IEICE Trans. Electron. E75-C (1992) 774.
11. K. Ohmi, K. Nakamura, T. Futatsuki and T. Ohmi: Symp. VLSI Technology Dig. Tech. Pap. Honolulu 1994, p. 109.
12. T. Ohnishi, M. Endo, K. Yano and N. Nomura: Ext. Abstr. 1993 Int. Conf. Solid State Devices and Materials, Makuhari 1993 (Buisness Center for Academic Socities, Tokyo, Japan, 1993) p. 627.
13. S. Verhaverbeke, T. Futatsuki, R. Messoussi and T. Ohmi: Semiconductor Silicon 1994, eds. H. R. Huff, W. Bergholz and K. Sumino (Electrochemical Society, Pennington, 1994) ECS Proceedings, Vol. 94-10, p. 1170.
14. T. Sunada, T. Yasaka, M. Takakura, T. Sugiyama, S. Miyazaki and M. Hirose: Jpn. J. Appl. Phys. 29 (1990) 2408.
15. M. Grundner and H. Jacob: Appl. Phys. A 39 (1986) 73.
16. T. Homma, Y. Murao and R. Yamaguchi: J. Electrochem. Soc. 140 (1993) 3599.