Hole effective mass in strained Si1-xCx alloys

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5037-5041

  Lin, C Y ^a   Chang, S T ^b   Liu, C W ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HAMILTONIANS; LATTICE CONSTANTS; MORPHOLOGY; STRAIN; SUBSTRATES;

BAND STRUCTURES; CONSTANT ENERGY SURFACES; DENSITY OF STATES (DOS); HAMILTONIAN MATRICES;

SILICON ALLOYS;

EID: 9744233648     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796516     Document Type: Article

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