Novel epitaxial p-Si/n-Si1-yCy/p-Si heterojunction bipolar transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 749-752

  Singh, D V ^a   Hoyt, J L ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; EPITAXIAL GROWTH; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

BANDGAP;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034454566     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)