Capture of flaked particles during plasma etching by a negatively biased electrode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2359-2363

  Moriya, Tsuyoshi ^a   Ito, Natsuko ^a   Uesugi, Fumihiko ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CORRELATION METHODS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON MOBILITY; ELECTROSTATICS; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUIT MANUFACTURE; LASER PULSES; LIGHT SCATTERING; PARTICLE BEAM DYNAMICS; RADIO WAVES; RAYLEIGH SCATTERING; SILICON WAFERS;

ETCHING CHAMBERS; FLAKED PARTICLES; PARTICLE CONTAMINATION; PARTICLE TRAJECTORIES;

PLASMA ETCHING;

EID: 9744229246     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1788678     Document Type: Article

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