Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition

Sensors and Actuators, A: Physical

Volumn 117, Issue 1, 2005, Pages 143-150

  Li, Xueping ^a   Kasai, Takashi ^a   Nakao, Shigeki ^a   Ando, Taeko ^a   Shikida, Mitsuhiro ^a   Sato, Kazuo ^a   Tanaka, Hiroshi ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Fracture path; Fracture toughness; Single crystal silicon; Tensile test

Indexed keywords

ANISOTROPY; BENDING (DEFORMATION); CRYSTAL ORIENTATION; FRACTURE; FRACTURE TOUGHNESS; MICROELECTROMECHANICAL DEVICES; SINGLE CRYSTALS;

FRACTURE PATH; TENSILE ORIENTATIONS; UNIAXIAL TENSILE CONDITION;

SILICON;

EID: 9644268287     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.06.003     Document Type: Article

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