A method for measuring the fracture toughness of micrometer-sized single crystal silicon by tensile test

TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers

Volumn 1, Issue , 2003, Pages 444-447

  Li, K ^a   Kasai, T ^a   Nakao, S ^a   Tanaka, H ^a,b   Ando, T ^a   Shikida, M ^a   Sato, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Bars; Crystalline materials; Materials testing; Mechanical factors; Micromechanical devices; Scanning electron microscopy; Semiconductor device measurement; Silicon; System testing; Tensile stress

Indexed keywords

ACTUATORS; BARS (METAL); CRYSTALLINE MATERIALS; ELECTRON DEVICE TESTING; FRACTURE; MATERIALS TESTING; MICROMETERS; MICROSYSTEMS; MONOCRYSTALLINE SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DEVICES; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SOLID-STATE SENSORS; STRESSES; TENSILE STRESS; TENSILE TESTING; TRANSDUCERS;

MACROSCOPIC DOMAINS; MATERIAL CONSTANT; MECHANICAL FACTORS; MICROMECHANICAL DEVICE; SEMICONDUCTOR DEVICE MEASUREMENTS; SINGLE CRYSTAL SILICON; SYSTEM TESTING; UNIAXIAL TENSILE TEST;

FRACTURE TOUGHNESS;

EID: 84944731776     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2003.1215349     Document Type: Conference Paper

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