Porous extreme low κ (ELκ) dielectrics using a PECVD porogen approach

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 277-282

  Favennec, L ^a   Jousseaume, V ^b   Rouessac, V ^c   Fusalba, F ^a   Durand, J ^c   Passemard, G ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

Dielectric; FTIR; Low ; PECVD; Porogen

Indexed keywords

ADSORPTION ISOTHERMS; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLIZING; POROSITY; SILICON; THIN FILMS; ULSI CIRCUITS;

MATRIX PRECURSORS; POROGEN; SILICON CHIP INTERCONNECTION TECHNOLOGY;

DIELECTRIC MATERIALS;

EID: 9544257307     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.084     Document Type: Conference Paper

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