Stability of defects created by high fluence helium implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 226, Issue 4, 2004, Pages 531-536

  David, M L ^a   Beaufort, M F ^a   Barbot, J F ^a  

^a UMR 6630   (France)

Author keywords

Defects; Helium; Ion implantation; Silicon; TEM

Indexed keywords

ANNEALING; DEFECTS; ION IMPLANTATION; MICROELECTRONICS; PHASE DIAGRAMS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CAVITY FORMATION; DEFECT FORMATION; ION IMPLANTATION TEMPERATURE;

HELIUM;

EID: 9544235200     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.07.009     Document Type: Article

References (17)

1. D.M. Follstaedt, S.M. Myers, G.A. Petersen, J.W. Medernach, J. Elec. Mater. 25 (1996) 151.
2. C.C. Griffioen, J.H. Evans, P.C. De Jong, A. van Veen, Nucl. Instr. and Meth. B 27 (1987) 417.
3. A. Claverie, B. Colombeau, G. Ben Assayag, C. Bonafos, F. Cristiano, M. Omri, B. de Mauduit, Mater. Sci. Semi. Proc. 3 (2000) 269.
4. D.J. Eaglesham, P.A. Stolk, H.J. Gossmann, T.E. Haynes, J.M. Poate, Nucl. Instr. and Meth. B 106 (1995) 191.
5. P.A. Stolk, H.J. Grossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, H.S. Luftman, T.E. Haynes, J. Appl. Phys. 81 (1997) 6031.
6. E. Oliviero, M.F. Beaufort, J.F. Barbot, J. Appl. Phys. 90 (2001) 1718.
7. S.M. Myers, D.M. Follstaedt, J. Appl. Phys. 86 (1999) 3048.
8. M.L. David, M.F. Beaufort, J.F. Barbot, J. Appl. Phys. 93 (2003) 1438.
9. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.
10. V. Raineri, S.U. Campisano, Nucl. Instr. and Meth. B 120 (1996) 56.
11. M.D. Giles, J. Electrochem. Soc. 138 (1991) 1160.
12. K.S. Jones, Appl. Phys. A 451 (1988) 1.
13. X.F. Zhu, J.S. Williams, M.J. Conway, M.C. Ridgway, F. Fortuna, M.O. Ruault, H. Bernas, Appl. Phys. Lett. 79 (2001) 3416.
14. C.A. Ferreira Lima, A. Howie, Philos. Mag. 34 (1976) 1057.
15. A.L. Aseev, L.I. Fedina, D. Hoehl, H. Bartsch, Clusters of Interstitial Atoms in Silicon and Germanium, Akademie Verlag, Berlin, 1994.
16. M.L. David, A. Ratchenkova, E. Oliviero, M.F. Denanot, M.F. Beaufort, A. Declémy, C. Blanchard, N.N. Gerasimenko, J.F. Barbot, Nucl. Instr. and Meth. B 198 (2002) 83.
17. E. Oliviero, M.L. David, M.F. Beaufort, J.F. Barbot, A. Van Veen, Appl. Phys. Lett. 81 (2002) 4201.