Light-emitting ambipolar organic heterostructure field-effect transistor

Synthetic Metals

Volumn 146, Issue 3, 2004, Pages 237-241

  Rost, Constance ^a   Karg, Siegfried ^a   Riess, Walter ^a   Loi, Maria Antonietta ^b   Murgia, Mauro ^b   Muccini, Michele ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b CNR   (Italy)

Author keywords

Ambipolar; Light emitting; Transistor

Indexed keywords

CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; HOLE MOBILITY; LIGHT EMISSION; LIGHT EMITTING DIODES; POLARIZATION; THIN FILM TRANSISTORS;

AMBIPOLAR BEHAVIOR; GATE VOLTAGE; HOLE CURRENT; LIGHT-EMITTING;

FIELD EFFECT TRANSISTORS;

EID: 9344252848     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.003     Document Type: Conference Paper

References (30)

1. C.W. Tang, S.A. VanSlyke, Appl. Phys. Lett. 51 (1987) 913.
2. R.H. Friend, R.W. Gymer, A.B. Holmes, J.H. Burroughes, R.N. Marks, C. Taliani, D.D.C. Bradley, D.A. Dos Santos, J.L. Bréas, M. Lödlund, W.R. Salaneck, Nature 397 (1999) 121.
3. S.E. Shaheen, C.J. Brabec, N.S. Sariciftci, F. Padinger, T. Fromherz, J.C. Hummelen, Appl. Phys. Lett. 78 (2001) 841.
4. P. Peumans, S. Uchida, S.R. Forrest, Nature 425 (2003) 158.
5. L. Edman, M. Pauchard, B. Liu, G. Bazan, D. Moses, A.J. Heeger, Appl. Phys. Lett. 82 (2003) 3961.
6. K. Kudo, M. Yamashina, T. Moriizuni, Jpn. J. Appl. Phys. 23 (1984) 130.
7. G. Horowitz, D. Fichou, X. Peng, Z. Xu, F. Garnier, Solid State Commun. 72 (1989) 381.
8. D.J. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson, D.G. Schlom, IEEE Electron. Device Lett. 18 (1997) 87.
9. H. Sirringhaus, N. Tessler, R.H. Friend, Science 280 (1998) 1741.
10. T. Tsujimura, in SID 2003 Technical Digest, vol. XXXIV, Book 1, 2003, pp. 6.
11. T.N. Jackson, Y.Y. Lin, D.J. Gundlach, H. Klauk, IEEE J. Sci. Top. Quantum Electron. 4 (1998) 100.
12. H. Pfleiderer, W. Kusian, Solid-State Electron. 29 (1986) 317.
13. H. Pfleiderer, IEEE Trans. Electron. Device 33 (1986) 145.
14. G.W. Neudeck, H.F. Bare, K.Y. Chung, IEEE Trans. Electron. Device 34 (1987) 344.
15. A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, H. von Seggern, Phys. Rev. Lett. 91 (2003) 157406.
16. C. Santato, R. Capelli, M.A. Loi, M. Murgia, F. Cicoira, V.A.L. Roy, P. Stallinga, R. Zamboni, C. Rost, S.F. Karg, M. Muccini, Synthetic Metals (in press).
17. R. Capelli, M.A. Loi, C. Santato, and M. Muccini, Organic Electronics (submitted for publication).
18. C. Rost, D.J. Gundlach, S. Karg, W. Riess, J. Appl. Phys. 95 (2004) 5782.
19. Y.-Y. Lin, D.J. Gundlach, S.F. Nelson, T.N. Jackson, IEEE Trans. Electron. Device 44 (1997) 1325.
20. P.R.L. Malenfant, C.D. Dimitrakopoulos, J.D. Gelorme, A. Curioni, W. Andreoni, Appl. Phys. Lett. 80 (2002) 2517.
21. C. Rost, S. Karg, and W. Riess, M.A. Loi, M. Murgia, and M. Muccini, Appl. Phys. Lett. 85 (2004) 1613.
22. N. Karl, in: R. Farchioni, G. Grosso (Eds.), Organic Electronic Materials, Springer Series in Materials Science, vol. 41, Springer-Verlag, Berlin Heidelberg, New York, 2001, pp.
23. CRC Handbook of Chemistry and Physics, 77th edition, CRC Press, Boca Raton, 1996.
24. M. Hiramoto, K. Ihara, H. Fukusumi, M. Yokohama, J. Appl. Phys. 78 (1995) 7153.
25. E.J. Meijer, D.M. de Leeuw, S. Estalles, E. van Veenendaal, B.-H. Huisman, P.W.M. Blom, J.C. Hummelen, U. Scherf, T.M. Klapwijk, Nat. Mater. 2 (2003) 678.
26. A. Dodabalapur, H.E. Kate, L. Torsi, R.C. Haddon, Appl. Phys. Lett. 68 (1996) 1108.
27. S.M. Sze, Physics of Semiconductor Devices, John Wiley, New York, 1981.
28. G. Horowitz, Adv. Mater. 10 (1998) 365.
29. M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York, 1970.
30. Th. Lindner, G. Paasch, C. Rost, S. Karg, W. Riess, in preparation.