Improved step-graded-channel heterostructure field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 5942-5944

  Yu, Shu Jenn ^a   Hsu, Wei Chou ^a   Li, Yih Juan ^a   Chen, Yeong Jia ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

doped; Coulomb scattering; Gate voltage swing; HFET; Step graded channel

Indexed keywords

CURRENT DENSITY; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ETCHING; HETEROJUNCTIONS; OHMIC CONTACTS; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

Δ-DOPED; COULOMB SCATTERING; GATE-VOLTAGE SWING; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); STEP-GRADED CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 9144223961     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5942     Document Type: Article

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