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Volumn , Issue , 1996, Pages 251-254
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Investigation of step-doped channel heterostructure field-effect transistor
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRIC CURRENT MEASUREMENT;
HETEROJUNCTIONS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
TRANSCONDUCTANCE;
VOLTAGE MEASUREMENT;
STEP DOPED CHANNEL FIELD EFFECT TRANSISTORS (SDCFET);
FIELD EFFECT TRANSISTORS;
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EID: 0030361657
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (8)
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