A novel high-performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET by ion implantation

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 487-490

  Nishii, K ^a   Nishitsuji, M ^a   Uda, T ^a   Yokoyama, T ^a   Yamamoto, S ^a   Kunihisa, T ^a   Tamura, A ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM ARSENIDE; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HETEROJUNCTIONS; ION IMPLANTATION; SEMICONDUCTOR ALLOYS; SILICON WAFERS;

ADJACENT CHANNEL LEAKAGE POWER RATIOS; ANNEALING CONDITION; CENTER FREQUENCY; DOUBLE HETEROJUNCTIONS; HIGH-ACTIVATION; LAYER STRUCTURES; POWER-ADDED EFFICIENCY; STANDARD DEVIATION;

GALLIUM ALLOYS;

EID: 9144226077     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711721     Document Type: Conference Paper

References (4)

1. Yokoyama T, Kutiihisa T, Fujimoto H, Takehara H, Ishida K, Ikeda H, Ishikawa O 1994 IEEE Trans, on Microwave Theory and Techniques 42 2623-2628
2. Yokoyama T, Kunuhisa T, Nishijima M, Yamamoto S, Nishitsuji M, Nishii K, Nakayama M, Ishikawa O 1996 Proc. Int. Conf. on IEEE GaAs IC Symp. 107-110
3. Adachi S 1988 J. AppL Phys. 63 64-67
4. Christine S L and Clifton G F 1988 J. AppL Phys. 64 2103-2106