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Volumn 6, Issue 4, 2004, Pages 415-419

The structural and optical properties of gallium arsenic nanoparticles

Author keywords

GaAs; Nanoparticle; Structural properties; Thermal evaporation

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; EVAPORATION; INERT GASES; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PRESSURE EFFECTS; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM DOTS; THERMOANALYSIS;

EID: 8844250756     PISSN: 13880764     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11051-004-8917-5     Document Type: Article
Times cited : (10)

References (14)
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  • 9
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    • Negative differential photoconductivity in quantum-dot infrared photodetectors
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    • Tang S.F., S.Y. Lin & S.C. Lee, 2002. Near-room temperature operation of InAs/GaAs quantum dot infrared photodetector. IEEE Trans. Electron Devices 49, 1341.
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  • 12
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    • Walter, G.1    Chung, T.2    Holonyak, N.3
  • 13
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    • Fabrication and characterization of deep mesa etched "anti"-dot superlattices in GaAs-AlGaAs heterostructures
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.