Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 489-492

  Zvanut, M E ^a   Konovalov, V V ^a   Mitchel, W C ^b   Mitchell, W D ^b  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Doping; Electron paramagnetic resonance; EPR; Hall measurement; High purity; Point defects; Semi insulating; SiC

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); FERMI LEVEL; PARAMAGNETIC RESONANCE; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; VANADIUM;

COMPENSATING SPECIES; HALL MEASUREMENTS; HIGH PURITY; SEMI-INSULATING (SI);

SILICON CARBIDE;

EID: 8744318531     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.489     Document Type: Conference Paper

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