Natural crystal habit and preferential growth directions during PVT of silicon carbide

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 111-114

  Herro, Z G ^a,b   Epelbaum, B M ^a,c   Bickermann, M ^a   Masri, P ^b   Seitz, C ^a   Magerl, A ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c SICRYSTAL AG   (Germany)

Author keywords

( 1100); (01 15); Crystal habit; Facet stability

Indexed keywords

APPROXIMATION THEORY; CRYSTAL DEFECTS; CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; SCANNING ELECTRON MICROSCOPY; X RAY ANALYSIS;

CRYSTAL HABITS; FACET STABILITY; SIC;

SILICON CARBIDE;

EID: 8744310086     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.111     Document Type: Conference Paper

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