Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 29-32

  Mokhov, E N ^a   Ramm, M G ^b   Ramm, M S ^c   Roenkov, A D ^a   Vodakov, Yu A ^a   Karpov, S Yu ^c   Makarov, Yu A ^d   Helava, H ^b  

^a Crystal Growth Research Center   (Russian Federation)

^b Fox Group Inc   (United States)

^c SOFT IMPACT LTD   (Russian Federation)

^d STR Inc   (United States)

Author keywords

Bulk Crystals; SiC; Sublimation Growth

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); SILICON CARBIDE; STRESS ANALYSIS; SUBLIMATION;

MICROPIPES;

POLYCRYSTALLINE MATERIALS;

EID: 0242581557     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.29     Document Type: Conference Paper

References (4)

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3. S.Yu. Karpov, A.V. Kulik, I.A. Zhmakin, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, and Yu.A. Vodakov: J. Cryst. Growth 211 (2000) p.347.
4. Yu.A. Vodakov, A.D. Roenkov, M.G. Ramm, E.N. Mokhov, and Yu.N. Makarov: Phys. Stat. Sol. (b) 202 (1997) p. 177.