600v CSTBT having ultra low on-state voltage

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 445-448

  Takahashi, H ^a   Aono, S ^a   Yoshida, E ^a   Moritani, J ^a   Hine, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC LOSSES; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING CIRCUITS; THYRISTORS; VOLTAGE CONTROL;

CARRIER STORED TRENCH-GATE BIPOLAR TRANSISTORS (CSTBT);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034827504     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. 600V trench IGBT in comparison with planer IGBT - An evaluation of the limit of IGBT performance
2. Feature and application of new 1200V trench gate IGBT modules
3. rd generation of 1200V IGBT modules
4. 100A 600V NEW IPM
5. Carrier stored trench-gate bipolar transistor - A novel power device for high voltage application