New and improved quantitative characterization of SiC using SIMS

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 581-584

  Wang, Larry ^a   Sams, David B ^a   Wang, Alice ^a   Park, Byoung Suk ^a  

^a CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

Detection Limits; Precision; Quantification; Reproducibility; SiC; SIMS

Indexed keywords

IMPURITIES; SECONDARY ION MASS SPECTROMETRY;

ANALYSIS TECHNIQUES; DETECTION LIMITS; LONG TERM ANALYSIS; PRECISION; PRECISION STUDIES; QUANTIFICATION; QUANTITATIVE CHARACTERIZATION; REPRODUCIBILITIES;

SILICON CARBIDE;

EID: 4243248244     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/wwwscientific.net/MSF.389-393.581     Document Type: Conference Paper

References (3)

1. Secondary Ion Mass Spectrometry. A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, R. G. Wilson, F. A. Stevie, C. W. Magee, John Wiley & Sons, New York (1989).
2. Secondary Ion Mass Spectrometry. Basic Concepts. Instrumental Aspects. Applications and Trends, A Benninghoven, F. G. Rudenauer and H. W. Werner. John Wiley & Sons. New York (1987).
3. Charles Evans & Associates Application Note, www.caglabs.com/literature/precision.pdf