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Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1287-1292

Hall effect measurements in SiC buried-channel MOS devices

(2) Saks, N S a Ryu, S H b

a NAVAL RESEARCH LABORATORY (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

Buried channel; Hall mobility; Inversion layer; MOS; Sic

Indexed keywords

ELECTRONS; HALL EFFECT; INTERFACES (MATERIALS); LIGHT SCATTERING; MOS DEVICES; MOSFET DEVICES;

BURIED-CHANNEL; ELECTRON CONDUCTION; HALL MOBILITY; INVERSION LAYER;

SILICON CARBIDE;

EID: 8744274362 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.1287 Document Type: Conference Paper

Times cited : (3)

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