Design of 1.7 to 14kV normally-off trenched and implanted vertical JFET in 4H-SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1197-1200

  Li, X ^a,b   Zhao, J H ^c  

^a UNITED SILICON CARBIDE INC   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c NONE

Author keywords

Numerical; SiC; Simulation; Vertical JFET

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; OHMIC CONTACTS; OPTIMIZATION; SILICON CARBIDE;

BLOCKING VOLTAGE; DRIFT LAYERS; STATE-OF-THE-ART SIMULATIONS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 8744251348     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1197     Document Type: Conference Paper

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