Study of polytype switching vs. micropipes in PVT grown SiC single crystals

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 51-54

  Wang, S ^a   Sanchez, E ^a   Kopec, A ^a   Zhang, M ^a   Hernandez, O ^a  

^a Dow Corning Corporation   (United States)

Author keywords

Growth; Micropipes; Polytypes; PVT; Sic

Indexed keywords

CARBON; CRYSTAL GROWTH; DOPING (ADDITIVES); NITROGEN; OPTICAL MICROSCOPY; POWER ELECTRONICS; SINGLE CRYSTALS; SUBLIMATION;

CRYSTAL WAFERS; MICROPIPE DENSITIES; PHYSICAL VAPOR TRANSPORT (PVT); POLYTYPE SWITCHING;

SILICON CARBIDE;

EID: 8744239338     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.51     Document Type: Conference Paper

References (4)

1. Y.M. Tairov and V.F. Tsvetkov: Prog. Crystal Growth and Characterization (1983), p. 111.
2. T.L. Straubinger, M. Bickermann, D. Hofmann, R. Weingartner, P.J. Wellmann and A. Winnacker: Materials Science Forum Vols. 353356 (2001), p. 25.
3. N. Ohtani, N. Katsuno, T. Fujimoto, T. Aigo and H. Yashiro: Materials Science Forum Vols. 389-393 (2001), p. 99.
4. E.K. Sanchez, A. Kopec, S. Poplawski, R. Ware, S. Holmes, S. Wang and A. Timmerman: Materials Science Forum Vols. 389-393 (2001). p. 71-74.