The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 71-74

  Sanchez, E K ^a   Kopec, A ^a   Poplawski, S ^a   Ware, R ^a   Holmes, S ^a   Wang, S ^a   Timmerman, A ^a  

^a Sterling Semiconductor Inc   (United States)

Author keywords

Bulk growth; Inclusions; Micropipes; Nucleation; Polytypes; SiC; Sublimation

Indexed keywords

INCLUSIONS; NUCLEATION; SUBLIMATION;

4H SILICON CARBIDE; BASAL PLANES; BULK GROWTH; ISLAND GROWTH; MICROPIPES; PHYSICAL VAPOR TRANSPORT; POLYTYPES; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 26144473862     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.3S9-393.71     Document Type: Conference Paper

References (11)

1. D. Hobgood, M. Brady, W. Bnxius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Muller, V. Tsvetkov, C. Carter Jr..., Mater. Sci. Forum 338-342 (2000), p. 3.
2. A. Powell, S. Wang, G. Brandcs, Mater. Sci. Fourm 338-342 (2000), p. 437.
3. Y. M. Tairov, V. F. Tsvetkov, J. Crystal Growth 52 (1981). p. 146.
4. D. L. Barrett. R. G. Seidensticker, W. Gaida, R. H. Hopkins, W. J. Choyke, J. Crystal Growth 109 (1991). p. 17.
5. D. Hofmann, M. Bickermann, W. Hartung, A. Winnackcr, Mat. Sci. Forum 338-342 (2000), p. 445.
6. J E. K. Sanchez, M. Dc Gracf, W. Qian, M. Skowronski, Mat. Res. Soc. Symp. 442 (1997), p. 655
7. E. K. Sanchez, J. Q. Liu, W. Vetter, M. Dudley, M. Skowronski, submitted to J. Appl. Physics.
8. S. Ha, L. B. Rowland, M. Skowronski, to be published at 1CSCRM 2001.
9. J. Giocondi, G. S. Roller. M. Skowronski. V. Balakrishna, G. Augustine. H. M. Hobgood, R. H. Hopkins. J. Crystal Growth 181 (1997), p. 351.
10. P. Pirouz, Mat. Res. Soc. Symp. Proc. 512 (1998), p. 113.
11. N. Suigiyama, A. Okamoto, K. Okumura, T. Tani, N. Kamiya, J. Crystal Growth, 84 (1997), p. 84.