Effect of the Si droplet size on the VLS growth mechanism of SiC homoepitaxial layers

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 287-290

  Ferro, G ^a   Chaussende, D ^b   Cauwet, F ^a   Monteil, Y ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

Epitaxy; Liquid; Si; VLS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; LIQUIDS; SILICON; SILICON CARBIDE; SUBLIMATION; DROPS; PROPANE; SILICON WAFERS;

HOMOEPITAXIAL GROWTH; SUBLIMATION EPITAXY; VAPOUR-LIQUID-SOLID (VLS); 4H-SIC SUBSTRATE; DROPLET SIZES; HOMOEPITAXIAL LAYERS; SILICON DROPLETS; VAPOUR-LIQUID-SOLID MECHANISMS; VLS GROWTH MECHANISM;

MATERIALS SCIENCE; GROWTH RATE;

EID: 0141814966     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.287     Document Type: Article

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