Effect of combined oxygenation and gettering on minority carrier lifetime in high-resistivity FZ silicon

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Lozano, M ^a   Ullan M ^a   Martinez C ^a   Fonseca, L ^a   Rafi J M ^a   Campabadal, F ^a   Cabruja, E ^a   Fleta, C ^a   Key, M ^a   Bermejo, S ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEPOSITION; GETTERS; OXIDATION; PHOTOCONDUCTING DEVICES; RADIATION; THERMAL EFFECTS;

GETTERING; OXIDES LAYERS; OXYGENATION; THERMAL ANNEALING;

SILICON;

EID: 8644271692     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1786091     Document Type: Article

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