Reflow characteristics of copper in an oxygen ambient

Key Engineering Materials

Volumn 270-273, Issue I, 2004, Pages 820-825

  Kim, Sang Ho ^a   Kim, Dong Won ^b  

^a Korea University of Technology and Education   (South Korea)

^b Kyonggi University   (South Korea)

Author keywords

Agglomeration; Annealing; MOCVD; Reflow; Surface energy

Indexed keywords

AGGLOMERATION; ANNEALING; ELECTRIC CONDUCTIVITY; INTERFACIAL ENERGY; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; POTENTIAL ENERGY;

ANNEALING TEMPERATURE; COPPER FILMS; REFLOW CHARACTERISTICS; STRESS MIGRATION (SM);

COPPER;

EID: 8644265061     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

1. S. P. Murarka : in Tungsten and Other Advanced Metals for VLSI Application 1990, edited by G. C. Smith and R. Blumenthal (Material Research Society, Pittsburgh, 1991), p.179.
2. P. Singer : Semicond. Int. Vol. 19 (1993), p.34.
3. K. K. Choi, S. W. Rhee : Thin Solid Films, Vol.397 (2001), p.70.
4. S. K. Rha, W. J. Lee, S. Y. Lee, D. W. Kim and C. O. Park : J. of Materials Science: Materials in Electronics, Vol.8 (1997), p.217.
5. S.Y. Lee, D. W. Kim, S. K. Rha, J. W. Park and H. H. Park : J. Vac. Sci. Technol. B Vol. 16 (1998), p.2902.
6. K. K. Choi, J. H. Yun, S. W. Rhee : Thin Solid Films, Vol. 429 (2003), p.255.