Silicon Oxidation Studies: Analysis of SiO2 Film Growth Data

Journal of the Electrochemical Society

Volumn 123, Issue 9, 1976, Pages 1380-1384

  Irene, E A ^a   van der Meulen, Y J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

insulating films; oxidation kinetics; rate constants

Indexed keywords

FILMS - PREPARATION;

SILICON AND ALLOYS;

EID: 0016994176     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2133080     Document Type: Article

References (10)

1. B.E. Deal and A.S. Grove, J. Appl. Phys., 36, 3770 (1965).
2. A.G. Revesz and R.J. Evans, J. Phys. Chem. Solids, 30, 551 (1969).
3. T. Nakayama and F.C. Collins, Journal of the Electrochemical Society, 113, 706 (1965).
4. Y.J. van der Meulen, J. Electroanal. Chem., 119, 530 (1972).
5. E.A. Irene, J. Electroanal. Chem., 121, 1613 (1974).
6. U.R. Evans, “The Corrosion and Oxidation of Metals,” Chap. XX, p. 826, Edward Arnold Ltd., London (1960).
7. Y.J. van der Meulen and N.C. Hien, J. Opt. Soc. Am., 64, 804(1974).
8. H.D. Young, “Statistical Treatment of Experimental Data,” Chap. IV, McGraw-Hill Co., Inc., New York (1962).
9. L. Pauling, “The Nature of the Chemical Bond,” 3rd ed., p. 85, Cornell University Press, Ithaca, New York (1960).
10. F.J. Norton, Nature, 171, 701 (1961).