Very high growth rate epitaxy processes with chlorine addition

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 157-160

  La Via, F ^a   Leone, S ^b   Mauceri, M ^b   Pistone, G ^b   Condorelli, G ^b   Abbondanza, G ^b   Portuese, F ^b   Galvagno, G ^a   Di Franco, S ^a   Calcagno, L ^c   Foti, G ^c   Valente, G L ^d   Crippa, D ^d  

^a CNR IMM   (Italy)

^b C o BIC Sicilia Pantano d'Arci   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d LPE   (Italy)

Author keywords

HCl; High growth rate; Homoepitaxial growth; Schottky diodes

Indexed keywords

EID: 85086679593     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.157     Document Type: Conference Paper

References (6)

1. Ryu S.H., Krishnaswami S., O'Loughlin M., Richmond J., Agarwal A., Palmour J., Hefner A.R.: IEEE Electron Device Letters Vol.25(8) (2004), p.556
2. Zhao J.H., Alexandrov P., Zhang J.H., Li X.Q.: IEEE Electron Device Letters Vol. 25 (7) (2004), p.474
3. Das M.K., Sumakeris J.J., Hull B.A., Richmond J., Krishnaswami S., Powell A.R.: Mat. Sci. Forum Vol 483 (2005), p.965
4. Zhao J.H., Alexandrov P., Li X.: IEEE Electron Device Letters Vol. 24(6) (2003), p.402
5. D. Crippa, G.L. Valente, A. Ruggiero, L. Neri, R. Reitano, L. Calcagno, G. Foti, M. Mauceri, S. Leone, G. Pistone, G. Abbondanza, G. Abagnale, A. Veneroni, F. Omarini, L. Zamolo, M. Masi, F. Roccaforte, F. Giannazzo, S. Di Franco and F. La Via: Mat. Sci. Forum Vol. 483-485 (2005), p.67
6. L. Calcagno, G. Izzo, G. Litrico, G. Galvagno, A. Firrincieli, S. Di Franco, M.Mauceri, S. Leone, G. Pistone, G. Condorelli, F. Portuese, G. Abbondanza, G. Foti and F. La Via: Mat. Sci. Forum (in press)