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Volumn 556-557, Issue , 2007, Pages 771-774
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9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
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Author keywords
High power; Planar gate IGBTs; Power IGBTs
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Indexed keywords
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EID: 85086679395
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-442-1.771 Document Type: Conference Paper |
Times cited : (7)
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References (4)
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