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Volumn 556-557, Issue , 2007, Pages 771-774

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

Author keywords

High power; Planar gate IGBTs; Power IGBTs

Indexed keywords


EID: 85086679395     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.771     Document Type: Conference Paper
Times cited : (7)

References (4)
  • 1
    • 0030268828 scopus 로고    scopus 로고
    • Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature application: A review
    • J. B. Casady and R. W. Johnson, "Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature application: A review," Solid-State Electron., vol. 39, pp. 1409-1422, 1996.
    • (1996) Solid-State Electron , vol.39 , pp. 1409-1422
    • Casady, J.B.1    Johnson, R.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.