Etching of 4° and 8° 4H-SiC using various hydrogen-propane mixtures in a commercial hot-wall CVD reactor

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 513-516

  Lew, Kok Keong ^a   VanMil, Brenda L ^a   Myers Ward, Rachael L ^a   Holm, Ronald T ^a   Eddy Jr , Charles R ^a   Gaskill, D Kurt ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Hotwall chemical vapor deposition; Hydrogen propane etching; Off oriented; Step bunching; Surface morphology

Indexed keywords

EID: 85085717561     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.513     Document Type: Conference Paper

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