Influence of metal layer thickness of spiral inductors on the quality factor by 3-D EM simulation

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn 2, Issue , 2003, Pages 1117-1119

  Shiwei, Lin ^a   Lihui, Guo ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ELECTROMAGNETIC SIMULATION; INTEGRATED CIRCUIT INTERCONNECTS; Q FACTOR MEASUREMENT;

CMOS COMPATIBLE; ELECTROMAGNETIC SIMULATORS; INTERCONNECT TECHNOLOGY; PROXIMITY EFFECTS; QUALITY FACTORS; SERIES RESISTANCES; SPIRAL INDUCTOR; STATE OF THE ART;

ELECTRIC INDUCTORS;

EID: 85085475097     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICASIC.2003.1277409     Document Type: Conference Paper

References (6)

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2. G. lihui, Y. Mingbin, C. Zhen, H. Han, and Z. Yi, "High Q multilayer spiral inductor on silicon chip for 5-6 GHz", IEEE Electron Device Letters, vol. 23, pp. 470-472, Aug. 2002.
3. Kunio Saito, et al., "A thick-Cu for add-on interconnections using photosensitive vanish for thick interlayer dielectric", Interconnect Technology Conference 2000, Proceeding of the IEEE 2000 International, pp. 123-125, Jun. 2000.
4. R. Groves, J. Malinowski, R. Volant, and D. Jadus, "High Q inductors in a SiGe BiCMOS process utilizing a thick metal process add-on module", Bipolar/BiCMOS Circuits and Technology Meeting 1999. Proceeding of the IEEE 1999 Published, pp. 149-152, Jul. 1999.
5. S. Jenei, S. Decoutere, K. Maex, and B. Nauwelaers, "Add-on Cu/SiLKTM module for high-Q inductors", IEEE Electron Device Letters, Vol. 23, pp. 173-175, Aug. 2002.
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