Anisotropy of the GaAs(001)-β2(2×4) surface from high-resolution electron energy loss spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 5-

  Balzarotti, A ^a   Placidi, E ^a   Arciprete, F ^a   Fanfoni, M ^a   Patella, F ^a  

^a INFM   (Italy)

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EID: 85038906067     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.115332     Document Type: Article

References (26)

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19. The anisotropic diffuse scattering (background) is large on decapped surfaces but it is also present (though smaller) on nonoptimized MBE-grown surfaces. The intensity of the elastic peak (and of its tail) was systematically higher in the [110] azimuth.
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22. Faint structures below 3 eV have been indeed calculated (Ref. 9) and measured (Ref. 12) on MBE-grown samples. They are either strongly weakened (Ref. 11) or missing (Refs. 71023) in As-decapped surfaces. We have taken near-normal RAS spectra together with EELS spectra on as-grown MBE surfaces that will be published elsewhere.
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25. See, e.g., S. De Giorgio, thesis, University of Roma “Tor Vergata” (2000), unpublished.
26. The intensity of the (formula presented) structures at 1.7 eV, 2.6 eV, and 3.5 eV in Fig. 11(a) attenuates exponentially with coverage with decay constants (formula presented) (formula presented) (formula presented) and (formula presented) (formula presented) respectively. Comparable decay constants are obtained for the (formula presented) spectrum.