Comparative study of Ag growth on GaAs(001) and (110) surfaces

Surface Science

Volumn 419, Issue 1, 1998, Pages 24-28

  Fanfoni, M ^a   Arciprete, F ^a   Patella, F ^a   Boselli, A ^a   Sgarlata, A ^a   Motta, N ^a   Balzarotti, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Clusters; Metal semiconductor interfaces; Surface kinetics

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; FILM GROWTH; METALLIC FILMS; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILVER; SURFACE PHENOMENA; SURFACE STRUCTURE; X RAY SPECTROSCOPY;

SURFACE KINETICS; VOLMER-WEBER GROWTH MODE; X RAY PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032312628     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00766-3     Document Type: Article

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