Discovery and Characterization of a Pourbaix-Stable, 1.8 eV Direct Gap Bismuth Manganate Photoanode

Chemistry of Materials

Volumn 29, Issue 23, 2017, Pages 10027-10036

  Newhouse, Paul F ^a   Reyes Lillo, Sebastian E ^c,e   Li, Guo ^a   Zhou, Lan ^a   Shinde, Aniketa ^a   Guevarra, Dan ^a   Suram, Santosh K ^a   Soedarmadji, Edwin ^a   Richter, Matthias H ^a,b   Qu, Xiaohui ^c,d   Persson, Kristin ^c,d   Neaton, Jeffrey B ^c,e,f   Gregoire, John M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b California Institute of Technology   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d University of California Berkeley   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f Kavli Nanoscience Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH ALLOYS; BISMUTH COMPOUNDS; CARBON; CHARACTERIZATION; COMPUTATION THEORY; DENSITY FUNCTIONAL THEORY; ELECTROLYTES; ENERGY GAP; FUELS; MANGANESE; MANGANESE ALLOYS; MANGANESE COMPOUNDS; OXYGEN; SAMARIUM; SAMARIUM ALLOYS; SILICATE MINERALS; SOLAR POWER GENERATION; TERNARY ALLOYS;

AQUEOUS ELECTROLYTE; CARBON CONTAINING; CRITICAL TECHNOLOGIES; ELECTROCHEMICAL POTENTIAL; HIGH THROUGHPUT SCREENING; PHOTOANODE MATERIALS; STABILITY REQUIREMENTS; STABLE OPERATION;

VANADIUM COMPOUNDS;

EID: 85038212735     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.7b03591     Document Type: Article

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