Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

Applied Physics Express

Volumn 6, Issue 1, 2013, Pages

  Podemski, Pawel ^a,c   Holmes, Mark ^a   Kako, Satoshi ^a   Arita, Munetaka ^a   Arakawa, Yasuhiko ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EXCITED STATES; GALLIUM NITRIDE; GROUND STATE; III-V SEMICONDUCTORS; NANOCRYSTALS; PHOTOLUMINESCENCE;

EXCITATION SPECTROSCOPY; GAN/ALN QUANTUM DOTS; INTERNAL ELECTRIC FIELDS; MICROPHOTOLUMINESCENCE; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; RESONANT ABSORPTION; STRAIN DISTRIBUTIONS; UV SPECTRAL REGIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 85029338031     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.012102     Document Type: Article

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