Unsupported single-atom-thick copper oxide monolayers

2D Materials

Volumn 4, Issue 1, 2017, Pages

  Yin, Kuibo ^a,b   Zhang, Yu Yang ^b,c   Zhou, Yilong ^a   Sun, Litao ^a,d   Chisholm, Matthew F ^b   Pantelides, Sokrates T ^b,c   Zhou, Wu ^b,e  

^a Southeast University   (China)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d SOUTHEAST UNIVERSITY   (China)

^e UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

2D materials; Copper oxide; First principles calculations; In situ STEM

Indexed keywords

ATOMS; CALCULATIONS; ENERGY GAP; GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; COPPER OXIDE LAYERS; FIRST-PRINCIPLES CALCULATION; GRAPHENE SUBSTRATES; MEASURED VALUES; NEW APPLICATIONS; OXIDE MONOLAYER; SQUARE LATTICES;

COPPER OXIDES;

EID: 85014430589     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/4/1/011001     Document Type: Article

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