-
2
-
-
0020102290
-
Proton damage effects on light emitting diodes
-
B. H. Rose and C. E. Barnes, “Proton damage effects on light emitting diodes,” J. Appl. Phys., vol. 53, no. 3, pp. 1992-1992, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, Issue.3
, pp. 1992
-
-
Rose, B.H.1
Barnes, C.E.2
-
3
-
-
0023565447
-
The effects of radiation on optoelectronic devices
-
C. E. Barnes, “The effects of radiation on optoelectronic devices,” Proc. SPIE, vol. 721, pp. 18-18, 1986.
-
(1986)
Proc. SPIE
, vol.721
, pp. 18
-
-
Barnes, C.E.1
-
4
-
-
0003381707
-
Radiation effect in light emitting diodes, laser diodes, photodiodes and optocouplers
-
H. Lischka, H. Henschel, O. Kohn, W. Lennartz, and H. U. Schmidt, “Radiation effect in light emitting diodes, laser diodes, photodiodes and optocouplers,” in Proc. RADECS93, pp. 226-226.
-
Proc. RADECS93
, pp. 226
-
-
Lischka, H.1
Henschel, H.2
Kohn, O.3
Lennartz, W.4
Schmidt, H.U.5
-
5
-
-
0033324761
-
Proton irradiation of light-emitting diodes
-
Dec.
-
A. H. Johnston, B. G. Rax, L. Selva, and C. E. Barnes, “Proton irradiation of light-emitting diodes,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1781-1781, Dec. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1781
-
-
Johnston, A.H.1
Rax, B.G.2
Selva, L.3
Barnes, C.E.4
-
6
-
-
0030359989
-
Total dose and proton damage in optocouplers
-
B. G. Rax, C. I. Lee, A. H. Johnston, and C. E. Barnes, “Total dose and proton damage in optocouplers,” IEEE Trans. Nucl. Sci., vol. 43, pp. 3167-3167, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 3167
-
-
Rax, B.G.1
Lee, C.I.2
Johnston, A.H.3
Barnes, C.E.4
-
7
-
-
0029455011
-
Gamma and neutron irradiation of optoelectronic devices
-
H. Lischka, H. Henschel, O. Kohn, W. Lennartz, S. Metzger, and H. U. Schmidt, “Gamma and neutron irradiation of optoelectronic devices,” in Proc. RADECS95, pp. 560-560.
-
Proc. RADECS95
, pp. 560
-
-
Lischka, H.1
Henschel, H.2
Kohn, O.3
Lennartz, W.4
Metzger, S.5
Schmidt, H.U.6
-
8
-
-
0034450452
-
Characterization of proton damage in light-emitting diodes
-
A. H. Johnston and T. F. Miyahira, “Characterization of proton damage in light-emitting diodes,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2500-2500, 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2500
-
-
Johnston, A.H.1
Miyahira, T.F.2
-
9
-
-
85008062300
-
Light-emitting diode device design
-
R. K. Willardson and A. C. Bear, Eds. New York: Academic
-
R. Saul, T. Lee, and C. Burrus, “Light-emitting diode device design,” in Semiconductors and Semimetals, R. K. Willardson and A. C. Bear, Eds. New York: Academic, 1984.
-
(1984)
Semiconductors and Semimetals
-
-
Saul, R.1
Lee, T.2
Burrus, C.3
-
10
-
-
0017514809
-
Design parameters of frequency response of GaAs-AlGaAs DH LED's for optical communications
-
K. Ikeda, S. Horiuchi, T. Tanaka, and W. Susaki, “Design parameters of frequency response of GaAs-AlGaAs DH LED's for optical communications,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1001-1001, 1977.
-
(1977)
IEEE Trans. Electron Devices
, vol.ED-24
, pp. 1001
-
-
Ikeda, K.1
Horiuchi, S.2
Tanaka, T.3
Susaki, W.4
-
11
-
-
84916794132
-
High light output-power single-longitudinal-mode semiconductor laser diodes
-
K. Kobayashi and I. Mito, “High light output-power single-longitudinal-mode semiconductor laser diodes,” IEEE Trans. Electron Devices, vol. 32, pp. 2594-2594, 1995.
-
(1995)
IEEE Trans. Electron Devices
, vol.32
, pp. 2594
-
-
Kobayashi, K.1
Mito, I.2
-
12
-
-
0028272689
-
Uniform and high-power characteristics of 780-nm Al-GaAs TQW laser diodes fabricated by large-scale MOCVD
-
A. Shima, M. Mayashita, T. Miura, T. Kadowaki, N. Hayafuji, M. Aiga, and W. Susaki, “Uniform and high-power characteristics of 780-nm Al-GaAs TQW laser diodes fabricated by large-scale MOCVD,” IEEE J. Quantum Electron., vol. 30, pp. 24-24, 1994.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 24
-
-
Shima, A.1
Mayashita, M.2
Miura, T.3
Kadowaki, T.4
Hayafuji, N.5
Aiga, M.6
Susaki, W.7
-
13
-
-
0000179232
-
High performance 670-nm AlGaInP/GaInP visible strained quantum well laser
-
Y.-K. Su, Li W.-L., S.-J. Chang, C. S. Chang, and C.-Y. Tsai, “High performance 670-nm AlGaInP/GaInP visible strained quantum well laser,” IEEE Trans. Electron Devices, vol. 45, pp. 763-763, 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 763
-
-
Su, Y.-K.1
Li, W.-L.2
Chang, S.-J.3
Chang, C.S.4
Tsai, C.-Y.5
-
14
-
-
0026139472
-
High temperature operation of InGaAs strained quantum-well lasers
-
R. J. Fu, C. S. Hong, E. Y. Chan, D. J. Booher, and L. Figueroa, “High temperature operation of InGaAs strained quantum-well lasers,” IEEE Photon. Technol. Lett., vol. 3, no. 4, pp. 308-308, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, Issue.4
, pp. 308
-
-
Fu, R.J.1
Hong, C.S.2
Chan, E.Y.3
Booher, D.J.4
Figueroa, L.5
-
15
-
-
0004031061
-
Radiation effects in optoelectronic devices
-
Albuquerque, NM, Tech. Rep. SAND84-0771
-
C. E. Barnes and J. J. Wiczer, “Radiation effects in optoelectronic devices,” Sandia National Laboratories, Albuquerque, NM, Tech. Rep. SAND84-0771, 1984.
-
(1984)
Sandia National Laboratories
-
-
Barnes, C.E.1
Wiczer, J.J.2
-
16
-
-
0027851447
-
5.5 MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broadband LED
-
B. D. Evans, H. E. Hager, and B.W. Hughlock, “5.5 MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broadband LED,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1645-1645, 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 1645
-
-
Evans, B.D.1
Hager, H.E.2
Hughlock, B.W.3
-
17
-
-
0031386894
-
200MeV proton damage effects on multi-quantum well laser diodes
-
Y. F. Zhao, A. R. Patwary, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, “200MeV proton damage effects on multi-quantum well laser diodes,” IEEE Trans. Nucl. Sci., vol. 44, pp. 1898-1898, 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 1898
-
-
Zhao, Y.F.1
Patwary, A.R.2
Schrimpf, R.D.3
Neifeld, M.A.4
Galloway, K.F.5
-
18
-
-
0029517909
-
The energy dependence of lifetime damage constants in GaAs LEDS for 1-500 MeV protons
-
A. L. Barry, A. J. Houdayer, P. F. Hinrichsen, W. G. Letourneau, and J. Vincent, “The energy dependence of lifetime damage constants in GaAs LEDS for 1-500 MeV protons,” IEEE Trans. Nucl. Sci., vol. 42, pp. 2104-2104, 1995.
-
(1995)
IEEE Trans. Nucl. Sci.
, vol.42
, pp. 2104
-
-
Barry, A.L.1
Houdayer, A.J.2
Hinrichsen, P.F.3
Letourneau, W.G.4
Vincent, J.5
-
19
-
-
0024174933
-
Displacement damage in GaAs structures
-
G. P. Summers, E. A. Burke, M. A. Xapsos, C. J. Dale, P. W. Marshall, and E. L. Petersen, “Displacement damage in GaAs structures,” IEEE Trans. Nucl. Sci., vol. 35, pp. 1221-1221, 1988.
-
(1988)
IEEE Trans. Nucl. Sci.
, vol.35
, pp. 1221
-
-
Summers, G.P.1
Burke, E.A.2
Xapsos, M.A.3
Dale, C.J.4
Marshall, P.W.5
Petersen, E.L.6
-
20
-
-
0026172831
-
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, charcterization
-
J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez, “Vertical-cavity surface-emitting lasers: Design, growth, fabrication, charcterization,” IEEE J. Quantum Electron., vol. 27, pp. 1332-1332, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1332
-
-
Jewell, J.L.1
Harbison, J.P.2
Scherer, A.3
Lee, Y.H.4
Florez, L.T.5
-
21
-
-
0031275596
-
Vertical-cavity surface emitting lasers: Moving from research to manufacturing
-
K. D. Choquette and H. Q. Hou, “Vertical-cavity surface emitting lasers: Moving from research to manufacturing,” Proc. IEEE, vol. 85, pp. 1730-1730, 1997.
-
(1997)
Proc. IEEE
, vol.85
, pp. 1730
-
-
Choquette, K.D.1
Hou, H.Q.2
-
22
-
-
0008560885
-
Proton irradiation effects in oxide-confined vertical cavity surface emitting laser diodes
-
Fontevraud, France, Sept. 13-17
-
C. E. Barnes, J. Schwank, G. M. S. M. Armendariz, S. Guertin, G. Hash, and K. Choquette, “Proton irradiation effects in oxide-confined vertical cavity surface emitting laser diodes,” presented at the RADECS99, Fontevraud, France, Sept. 13-17, 1999.
-
(1999)
presented at the RADECS99
-
-
Barnes, C.E.1
Schwank, J.2
Armendariz, G.M.S.M.3
Guertin, S.4
Hash, G.5
Choquette, K.6
-
23
-
-
0033346701
-
Comparison of lifetime and threshold current damage factors for multiquantum-well GaAs/GaAlAs laser diodes irradiated at different proton energies
-
S. C. Lee, Y. F. Zhao, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, “Comparison of lifetime and threshold current damage factors for multiquantum-well GaAs/GaAlAs laser diodes irradiated at different proton energies,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1797-1797, 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1797
-
-
Lee, S.C.1
Zhao, Y.F.2
Schrimpf, R.D.3
Neifeld, M.A.4
Galloway, K.F.5
-
24
-
-
0019282498
-
A new model for light output degradation of direct bandgap semiconductors
-
P. F. Lindquist, “A new model for light output degradation of direct bandgap semiconductors,” in Proc. 1980 Int. Reliability Physics, pp. 145-145.
-
Proc. 1980 Int. Reliability Physics
, pp. 145
-
-
Lindquist, P.F.1
-
25
-
-
0034452349
-
Energy dependence of proton damage in AlGaAs light-emitting diodes
-
R. A. Reed, C. J. Marshall, K. A. LaBel, P. W. Marshall, H. S. Kim, and L. X. Nguyen, “Energy dependence of proton damage in AlGaAs light-emitting diodes,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2492-2492, 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2492
-
-
Reed, R.A.1
Marshall, C.J.2
LaBel, K.A.3
Marshall, P.W.4
Kim, H.S.5
Nguyen, L.X.6
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