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0028304539
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Quantum cascade laser
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2
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0032498464
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Short wavelength (A ~ 3.4 pm) quantum cascade laser based on strained compensated InGaAs/AlInAs
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J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S.-N.G. Chu, and A. Y. Cho, “Short wavelength (A ~ 3.4 pm) quantum cascade laser based on strained compensated InGaAs/AlInAs,” Appl. Phys. Lett., vol. 72, no. 6, pp. 680–682, 1998.
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3
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0034511026
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High-performance strain-compensated In-GaAs/InAlAs quantum cascade lasers
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4
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Continuous wave operation of a mid-nfrared semiconductor laser at room temperature
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6
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0001501162
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High-temperature operation of distributed feedback quantum-cascade lasers at 5.3 μm
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7
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8
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0036610430
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Infrared semiconductor lasers for sensing and diagnostics
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10
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3543076320
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Single-mode InP-based quantum cascade lasers for applications in trace-gas sensing
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C. Mann, Q. K. Yang, F. Fuchs, W. Bronner, K. Kohler, T. Beyer, M. Braun, and A. Lambrecht, C. G. Gmachl and D. P. Bour, Eds., “Single-mode InP-based quantum cascade lasers for applications in trace-gas sensing,” Proc. SPIE, vol. 5365, pp. 173–183, 2004.
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11
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79955990913
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Threshold reduction in quantum cascade lasers with partially undoped, dual-wavelength interdigitated cascades
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A. Straub, T. S. Mosely, C. Gmachl, R. Colombelli, M. Troccoli, F. Capasso, D. L. Sivco, and A. Y. Cho, “Threshold reduction in quantum cascade lasers with partially undoped, dual-wavelength interdigitated cascades,” Appl. Phys. Lett., vol. 80, no. 16, pp. 2845–2847, 2002.
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12
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18444407198
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Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions
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S. Hofling, R. Kallweit, J. Seufert, K. Koeth, J. P. Reithmaier, and A. Forchel, “Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions,” J. Cryst. Growth, vol. 278, pp. 775–779, 2005.
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13
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21244472108
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Effect of doping concentration on the performance of terahertz quantum-cascade lasers
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H. C. Liu, M. Wachter, D. Ban, Z. R. Wasilewski, M. Buchanan, G. C. Aers, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, “Effect of doping concentration on the performance of terahertz quantum-cascade lasers,” Appl. Phys. Lett., vol. 87, p. 141102, 2005.
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14
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20844432667
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Mechanisms of dynamic range limitations in GaAs/AlGaAs quantum-cascade lasers: Influence of injector doping
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V. D. Jovanović, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, E. H. Linfield, H. Page, X. Marcadet, C. Sirtori, C. Worrall, H. E. Beere, and D. A. Ritchie, “Mechanisms of dynamic range limitations in GaAs/AlGaAs quantum-cascade lasers: Influence of injector doping,” Appl. Phys. Lett., vol. 86, p. 211117, 2005.
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15
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1942451914
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Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers
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G. Scarpa, P. Lugli, N. Ulbrich, G. Abstreiter, M.-C. Amann, M. Manenti, F. Compagnone, and A. D. Carlo, “Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers,” Semicond. Sci. Technol., vol. 19, pp. S342-S344, 2004.
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16
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0037415837
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M. Giehler, R. Hey, S. Cronenberg, T. Ohtsuka, L. Schrottke, and H. T. Grahn, “Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density,” Appl. Phys. Lett., vol. 82, no. 5, pp. 671–673, 2003.
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19
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0036492701
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Improved large optical cavity design for 10.6 pm (Al)GaAs quantum cascade lasers
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G. Scarpa, N. Ulbrich, A. Sigl, M. Bichler, D. Schuh, M.-C. Amann, and G. Abstreiter, “Improved large optical cavity design for 10.6 pm (Al)GaAs quantum cascade lasers,” Physica E, vol. 13, pp. 844–847, 2002.
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