A comprehensive model for oxide degradation

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 853-856

  Irrera, Fernanda ^a   Puzzilli, Giuseppina ^a   Caputo, Domenico ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; LEAKAGE CURRENTS; REACTION KINETICS; REDUCTION; SILICA; ULTRATHIN FILMS;

DEFECT PRECURSORS; DEGRADATION KINETICS; OXIDE DEGRADATION; RATE EQUATIONS;

DEGRADATION;

EID: 84988419004     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.032     Document Type: Article

References (8)

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4. 2films IEEE Trans Electron Devices 45 1998 1554
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6. R.A. Street Hydrogenated amorphous silicon 1991 Cambrige University Press
7. F. Irrera, and B. Riccò SILC Dynamics in MOS structures subject to periodic stress IEEE Trans Electron Device 49 2002 1729
8. J. Suñé, P. Olivo, and B. Riccò Quantum-mechanical model of accumulation layers in MOS structures IEEE Trans Electron Device 43 1999 327