Multiferroic memory: A disruptive technology or future technology?

Solid State Phenomena

Volumn 189, Issue , 2012, Pages 1-14

  Kumar, Ashok ^a,b   Ortega, Nora ^a   Dussan, Sandra ^a   Kumari, Shalini ^a   Sanchez, Dilsom ^a   Scott, James ^a,c   Katiyar, Ram ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Bilayers and superlattices; FeRAM; Magnonic logics; MERAM; MRAM; Multiferroics; Nonvolatile memory; Thin and ultrathin films

Indexed keywords

BISMUTH COMPOUNDS; CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELDS; FERROELECTRIC RAM; IRON COMPOUNDS; MAGNETIC FIELDS; MAGNETIZATION; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PEROVSKITE; POLARIZATION; SPIN WAVES; SWITCHING; ULTRATHIN FILMS;

BI-LAYER; FERAM; MAGNONIC LOGICS; MERAM; MRAM; MULTIFERROICS; NON-VOLATILE MEMORY;

MRAM DEVICES;

EID: 84984645834     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.189.1     Document Type: Chapter

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